Temperature-dependent current-voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

The current-voltage (I-V) characteristics of Au/n-InP Schottky contacts have been measured in the temperature range of 70-300 K by steps of 10 K. Our data of the Au/n-InP Schottky contact strongly suggest that the temperature-dependent electron transport at the metal-semiconductor interface is significantly affected by the barrier inhomogeneity. The distribution of local effective SBHs has been modeled by a summation of existence of double Gaussian barrier heights which represents the high- and low-barrier of the full distribution in 170-300 and 70-170 K ranges.