Published January 6, 2014
| Version v1
Journal article
Ultrafast spin tunneling and injection in coupled nanostructures of InGaAs quantum dots and quantum well
Creators
- 1. Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814 (Japan)
Description
We investigate the electron-spin injection dynamics via tunneling from an In0.1Ga0.9As quantum well (QW) to In0.5Ga0.5As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs
Additional details
Identifiers
- DOI
- 10.1063/1.4861387;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 1
- Journal Page Range
- p. 012406-012406.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45078315
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; QUANTUM WELLS; SPIN; SPIN ORIENTATION; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LEPTONS; NANOSTRUCTURES; ORIENTATION; PARTICLE PROPERTIES; PNICTIDES
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC