Published January 20, 2006 | Version v1
Journal article

Influence of Nitrogen Doping on the Defect Formation and Surface Properties of TiO2 Rutile and Anatase

  • 1. Department of Physics, Tulane University, New Orleans, Louisiana 70118 (United States)

Description

Nitrogen doping-induced changes in the electronic properties, defect formation, and surface structure of TiO2 rutile(110) and anatase(101) single crystals were investigated. No band gap narrowing is observed, but N doping induces localized N 2p states within the band gap just above the valence band. N is present in a N(III) valence state, which facilitates the formation of oxygen vacancies and Ti 3d band gap states at elevated temperatures. The increased O vacancy formation triggers the 1x2 reconstruction of the rutile (110) surface. This thermal instability may degrade the catalyst during applications

Additional details

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
96
Journal Issue
2
Journal Page Range
p. 026103-026103.4
ISSN
0031-9007
CODEN
PRLTAO

Optional Information

Notes
(c) 2006 The American Physical Society