Study of the Etching Experiment by using the Plate to Plate DBD Plasma

Dielectric barrier Discharge(DBD) is an easily obtainable plasma source at atmospheric pressure. And the operating frequency is reached to RF from AC. In this study, we try to etch a Si wafer by using DBD. Atmospheric pressure plasma was generated using the plate to plate DBD with the power electrodes of the planar copper plate and silver coated stripe. The size of electrode was 89mm x 100mm. We compared the effect of the electrode's shapes on the etching of Si-wafer. And for the large surface processing, remote type DBD is used Discharge character of the DBD is investigated by measuring a power absorbtion as a function of frequency. We obtain the optimum frequency of around 2.5 kHz for power absorption. We change the several factors of experiments like O2(from 0 to 60sccm) flow rate, N2(0 to 2slm) flow rate, and frequency(1000Hz to 3000Hz) with each electrode configuration. In remote type, we change the distance from the DBD to sample and change the O2 from 0 to 60sccm, N2 from 0 to 3 l/min and CF4 from 50 to 300sccm. Finally, change the number of electrode (Silver paste), and measured the power and etching rate. In lattice shape etching was about 1.35μm/min, and in remote type, we get about 700nm/min