Galvanomagnetic and optical properties of narrow-gap Pbsub(1-x)Snsub (x)Te semiconductors. The influence of Gd and Bi doping
- 1. AN Ukrainskoj SSR, Kiev. Inst. Poluprovodnikov
Description
The effect of Gd and Bi additions on galvanomagnetic (Hall effect and electric conductivity) and optical (the coefficient of edge absorption) properties of Pbsub(1-x)Snsub(x)Te monocrystals (x=0.16-0.20) is investigated. The Gd addition is shown to effect the width of the Pbsub(1-x)Snsub(x)Te forbidden zone and it results in occurrence of addition states with ΔE=0.01 eV under the bottom of the conductivity zone. Gd and Bi additions are donors. Determined are solubility in the Pbsub(1-x)Snsub(x)Te monocrystals which has a retrograde nature and it equals 2.2x1021 cm-3 at T=638+-5 deg C, as well as diffusion coefficient. Gd diffusion is stated to be exercised by vacant nodes of metal components of solid solution. It is shown that in Gd and Bi alloying the value of the ratio of electrons and holes mobilities changes
Additional details
Additional titles
- Original title (Russian)
- Гальваномагнитные и оптические свойства узкозонных полупроводников Пбсуб(1-x)Снсуб(x)Те. Влияние примесей кадмия и висмута
Publishing Information
- Journal Title
- Ukr. Fiz. Zh.
- Journal Volume
- 27
- Journal Issue
- 6
- Series
- Ukr. Fiz. Zh.
- Journal Page Range
- 920-925
- ISSN
- 0503-1265
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 14739370
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BISMUTH ADDITIONS; CADMIUM ADDITIONS; CARRIER DENSITY; CARRIER MOBILITY; CRYSTAL DOPING; DIFFUSION; ELECTRIC CONDUCTIVITY; ENERGY GAP; HALL EFFECT; LEAD ALLOYS; LOW TEMPERATURE; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; OPTICAL PROPERTIES; QUANTITY RATIO; SOLID SOLUTIONS; SOLUBILITY; TELLURIDES; TEMPERATURE DEPENDENCE; TIN ALLOYS; ULTRALOW TEMPERATURE
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; DISPERSIONS; ELECTRICAL PROPERTIES; HOMOGENEOUS MIXTURES; MATERIALS; MIXTURES; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SOLUTIONS; TELLURIUM COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Ukrainian Physics Journal (USA).