Published July 2021 | Version v1
Journal article

One-step ultrafast deflagration synthesis of N-doped WO2.9 nanorods for solar water evaporation

  • 1. Institute of Chemical Materials, China Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, Sichuan (China)
  • 2. College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331 (China)

Description

Highlights: • The N-doped WO2.9 nanorods are rationally obtained via the one-step deflagration route. • The Na clusters, as the reductant capturing O from WO3, in situ derived from deflagration can be removed easily. • The NaN3 addition effects the concentration of surface defects and N-doped. • The introducing of surface defects and N-doped enhances the water evaporation efficiency. Up to now, the seawater desalination utilizing solar water evaporation has been considered as the most promising solution to solve water-shortage problems. Thus, preparing efficient photo-thermal conversion materials for water evaporation with an ultrafast and cheap method is a big challenge. Herein, the N-WO2.9 photo-thermal materials with the oxygen vacancy and N co-doping are synthesized by an ultrafast one-step NaN3 deflagration method. The deflagration produces Na clusters and N radicals, subsequently the former acts as a reductant capturing partial O from WO3, and the latter is partly doped in crystal lattice, which causes the phase transition from WO3 to N-WO2.9 and leads to a narrowed band gap. The modified materials significantly increase solar absorption and photo-thermal conversion, especially in visible and near infrared light. Hence, the N-doped WO2.9/cellulose paper photo-thermal membranes possess the superb water evaporation rate of 1.45 kg m-2h−1, stable efficiency of 83.1%, and the excellent desalination capability under 1 solar illumination. In addition, the deflagration method simultaneously achieving oxygen vacancy and high N-doping have opened up a new route for the design and synthesis of photo-thermal semiconductor materials.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2021.149697

Additional details

Identifiers

DOI
10.1016/j.apsusc.2021.149697;
PII
S016943322100773X;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
555
Journal Page Range
vp.
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2021 Elsevier B.V. All rights reserved.