One-step ultrafast deflagration synthesis of N-doped WO2.9 nanorods for solar water evaporation
Creators
- 1. Institute of Chemical Materials, China Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, Sichuan (China)
- 2. College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331 (China)
Description
Highlights: • The N-doped WO2.9 nanorods are rationally obtained via the one-step deflagration route. • The Na clusters, as the reductant capturing O from WO3, in situ derived from deflagration can be removed easily. • The NaN3 addition effects the concentration of surface defects and N-doped. • The introducing of surface defects and N-doped enhances the water evaporation efficiency. Up to now, the seawater desalination utilizing solar water evaporation has been considered as the most promising solution to solve water-shortage problems. Thus, preparing efficient photo-thermal conversion materials for water evaporation with an ultrafast and cheap method is a big challenge. Herein, the N-WO2.9 photo-thermal materials with the oxygen vacancy and N co-doping are synthesized by an ultrafast one-step NaN3 deflagration method. The deflagration produces Na clusters and N radicals, subsequently the former acts as a reductant capturing partial O from WO3, and the latter is partly doped in crystal lattice, which causes the phase transition from WO3 to N-WO2.9 and leads to a narrowed band gap. The modified materials significantly increase solar absorption and photo-thermal conversion, especially in visible and near infrared light. Hence, the N-doped WO2.9/cellulose paper photo-thermal membranes possess the superb water evaporation rate of 1.45 kg m-2h−1, stable efficiency of 83.1%, and the excellent desalination capability under 1 solar illumination. In addition, the deflagration method simultaneously achieving oxygen vacancy and high N-doping have opened up a new route for the design and synthesis of photo-thermal semiconductor materials.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2021.149697Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2021.149697;
- PII
- S016943322100773X;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 555
- Journal Page Range
- vp.
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54080359
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL LATTICES; DOPED MATERIALS; EVAPORATION; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SYNTHESIS; TUNGSTATES; TUNGSTEN OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier B.V. All rights reserved.