Published December 4, 2013 | Version v1
Journal article

Solution-phase synthesis and photoluminescence characterization of quaternary Cu2ZnSnS4 nanocrystals

  • 1. Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)
  • 2. College of Design and Manufacturing Technology, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran, Hokkaido 050-8585 (Japan)

Description

Cu2ZnSnS4 (CZTS) nanocrystals were synthesized via solution phase route and their lattice defects were investigated by photoluminescence measurements. Ionization energies of the defect levels were estimated to be 10 and 72 meV from thermal quenching behavior of the photoluminescence spectra. These values are quite different from those experimentally estimated for vapor-grown CZTS films and crystals and theoretically calculated for bulk CZTS. The results indicate that the defects are characteristic of CZTS nanocrystals synthesized in the solution phase

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1566
Journal Issue
1
Journal Page Range
p. 3-4
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
31. international conference on the physics of semiconductors
Acronym
ICPS 2012
Dates
29 Jul - 3 Aug 2012
Place
Zurich (Switzerland)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45083091
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; CRYSTALS; DEFECTS; FILMS; IONIZATION; NANOSTRUCTURES; PHOTOLUMINESCENCE; QUENCHING; SOLUTIONS; SPECTRA; SYNTHESIS
Descriptors DEC
CRYSTAL STRUCTURE; DISPERSIONS; EMISSION; HOMOGENEOUS MIXTURES; LUMINESCENCE; MIXTURES; PHOTON EMISSION

Optional Information

Notes
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