Published 2011 | Version v1
Journal article

Persistent ion beam induced conduction in semiconductor nanowires

  • 1. Institut fuer Festkoerper Physik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 (Germany)

Description

The electrical conductance of single, semiconductor nanowires is investigated in-situ during ion beam exposure. A stark increase in conductance proportional to ion flux and ion energy is observed. The increase in conductance shows remarkable similarities to the persistent photoconduction effect (PPC), which is well known yet not comprehensively understood. Especially ZnO nanowires show a strong increase in conductance (photo and ion induced) that only decays over days. Experiments are performed to investigate the parallels between ion and photo induced conductivity and to examine the underlying mechanisms. The decay rate is very sensitive to the external environment so that surface effects are considered to cause the conduction enhancement.

Additional details

Publishing Information

Journal Title
Verhandlungen der Deutschen Physikalischen Gesellschaft
Journal Issue
Dresden 2011 issue
Series
Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 46(1)
Journal Page Range
[1 p.]
ISSN
0420-0195
CODEN
VDPEAZ

Conference

Title
75. Annual meeting of the DPG and combined DPG Spring meeting of the condensed matter section and the section AMOP with further DPG divisions environmental physics, history of physics, microprobes, radiation and medical physics, as well as the working groups energy, equal opportunities, industry and business, information, philosophy of physics, physics and disarmament, young DPG
Dates
13-18 Mar 2011
Place
Dresden (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
42086899
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRIC CONDUCTIVITY; ION COLLISIONS; PHYSICAL RADIATION EFFECTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SURFACES; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; COLLISIONS; ELECTRICAL PROPERTIES; MATERIALS; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; ZINC COMPOUNDS

Optional Information

Notes
Session: HL 64.5 Mi 17:30; No further information available