Published August 1, 1991
| Version v1
Journal article
Comparison of defects produced by 14-MeV neutrons and 1-MeV electrons in n-type silicon
- 1. Department of Physics, University of Poona, Pune-411 007, India (India)
Description
Defects produced in lightly doped crystalline silicon by 1-MeV electrons and 14-MeV neutrons are studied. Deep level transient spectroscopy (DLTS) and Hall voltage measurements have been used for investigating the energy depth, nature, and density of radiation-induced defects. The extent of damage caused by 14-MeV neutrons is found to be comparatively high as inferred from the continuous distribution of gap states in the DLTS measurement. Identical defects were observed in both cases where the A-center (Ec-0.17 eV), E-center (Ec-0.39 eV), and divacancy (Ec-0.23 eV) were prominent. An additional defect level (Ec-0.86 eV) was observed from DLTS for neutron-irradiated samples
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 70
- Journal Issue
- 3
- Series
- J. Appl. Phys.
- Journal Page Range
- 1261-1264
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22068654
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COLOR CENTERS; DOPED MATERIALS; ELECTRONS; HALL EFFECT; MEV RANGE 01-10; MEV RANGE 10-100; N-TYPE CONDUCTORS; NEUTRONS; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; LEPTONS; MATERIALS; MEV RANGE; NUCLEONS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; VACANCIES