Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400 deg. C leads to the conversion of CuxSe thin film to Cu2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results