Published March 1986
| Version v1
Journal article
Effect of radiation-induced defects on volt-ampere characteristic of silicon multilayer structures
- 1. Vsesoyuznyj Ehlektrotekhnicheskij Inst., Moscow (USSR)
Description
Effect od radiation-induced defects on volt-ampere characteristics (VAC) of silicon multilayer structures in current high density region in which nonlinear effects - decrease of injection factors of emitter transitions, electron-hole scattering and others, are thought significant, are theoretically and experimentally investigated. It is shown that along with charge carrier lifetime decrease one more sufficient cause of VAC degradation due to irradiation is growth of emitter saturation current
Additional details
Additional titles
- Original title (Russian)
- Влияние радиационных дефектов на вольамперную характеристику кремниевых многослойных структур
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 20
- Journal Issue
- 3
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 532-534
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 18008518
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; LAYERS; LIFETIME; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; MATERIALS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).