Published May 1982
| Version v1
Journal article
Photoluminescence and gain spectroscopy of highly excited epitaxial GaN-layers
Creators
- 1. Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.)
- 2. Stuttgart Univ. (TH) (Germany, F.R.). Physikalisches Inst.
- 3. Karlsruhe Univ. (TH) (Germany, F.R.). Inst. fuer Angewandte Physik
- 4. Frankfurt Univ. (Germany, F.R.). Physikalisches Inst.
Description
The spectra of photoluminescence and optical gain of GaN have ben measured at low temperatures under N2-laser excitation. At low excitation levels (Isub(exc) approx. <= 104 W cm-2) we observe free and bound exciton recombination. At intermediate excitation (Isub(exc) approx. equal to 105 W cm-2), inelastic exciton-exciton scattering processes show up. At the highest excitation levels (Isub(exc) approx. >= 106 W cm-2) we report here for the first time the emission from an electron-hole plasma. (orig.)
Additional details
Publishing Information
- Journal Title
- Z. Phys., B
- Journal Volume
- 46
- Journal Issue
- 3
- Series
- Z. Phys., B.
- Journal Page Range
- 189-192
- ISSN
- 0340-224X
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 13681732
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ELECTRONS; EMISSION SPECTRA; EXCITATION; EXCITONS; EXPERIMENTAL DATA; GALLIUM NITRIDES; HEXAGONAL LATTICES; HOLES; INELASTIC SCATTERING; LASER RADIATION; LAYERS; PHOTOLUMINESCENCE; RECOMBINATION; SOLID-STATE PLASMA; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
- Descriptors DEC
- CRYSTAL LATTICES; CRYSTAL STRUCTURE; DATA; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY-LEVEL TRANSITIONS; FERMIONS; GALLIUM COMPOUNDS; INFORMATION; LEPTONS; LUMINESCENCE; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; PLASMA; QUASI PARTICLES; RADIATIONS; SCATTERING; SPECTRA