Published February 2011 | Version v1
Journal article

Effect of CdCl2 annealing treatment on CdS thin films and CdTe/CdS thin film solar cells

  • 1. Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)

Description

In order to study the effect of CdCl2 annealing treatment on thin CdS films and CdTe/CdS thin film solar cells, a comparative study was carried out on three types of CdTe/CdS solar cells, which had different kinds of CdS window layer: as-deposited CdS, air-annealed CdS without CdCl2 pre-coating, and CdCl2-annealed CdS. When annealed in air the CdS film was partially oxidated to CdO and CdSO4. These oxides increased the series resistance of the CdTe solar cell and led to the lowest fill factor. The presence of CdCl2 on the surface of a CdS thin film during heat treatment in air protected it from oxidation and promoted the recrystallization of the CdS film, resulting in large and closely packed grains with a grain size of ∝ 50 -150 nm. CdTe/CdS solar cell with such a kind of CdS window layer showed the largest short circuit current and highest conversion efficiency of 12.4%. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.201000445

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
8
Journal Issue
2
Journal Page Range
p. 628-630
ISSN
1610-1642

Conference

Title
37. international symposium on compound semiconductors (ISCS 2010)
Dates
31 May - 4 Jun 2010
Place
Kagawa (Japan)

Optional Information

Notes
With 2 figs., 11 refs.