Published December 29, 2008
| Version v1
Journal article
Intracavity terahertz generation inside a high-energy ultrafast soliton fiber laser
Creators
- 1. Institute of Applied Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, Jena D-07743 (Germany)
- 2. BATOP GmbH, Wildenbruchstrasse 15, Jena D-07745 (Germany)
- 3. Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Strasse 7, Jena D-07745 (Germany)
Description
Intracavity terahertz emission inside a high-energy ultrafast Yb-doped fiber laser is presented. The terahertz radiation is generated by a transient photocurrent induced at the surface of a saturable InGaAs multiquantum well grown by molecular beam epitaxy on top of a semiconductor Bragg reflector. This device simultaneously works as the saturable absorber mirror for initiating and managing the passive mode locking required for the ultrashort pulse operation of the laser system. The maximum terahertz average power achieved is 4.2 μW, which reveals a net conversion efficiency of 3.1x10-5
Additional details
Identifiers
- DOI
- 10.1063/1.3056118;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 26
- Journal Page Range
- p. 261105-261105.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051210
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; DOPED MATERIALS; FIBERS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASERS; MODE LOCKING; MOLECULAR BEAM EPITAXY; OPTICS; PHOTOCONDUCTIVITY; PULSES; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SOLITONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; QUASI PARTICLES
Optional Information
- Notes
- (c) 2008 American Institute of Physics