Published 2003 | Version v1
Miscellaneous Open

Growth study of GaAs and AlGaAs epitaxial layers on micro relief gallium arsenide substrate

  • 1. Physical-Technical Institute AS RU, NPO 'Physics-Sun', Tashkent (Uzbekistan)

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Part of:
Proceedings of the conference 'Fundamental and applied problems of physics'

Additional details

Additional titles

Original title (Russian)
Исследование процессов роста эпитаксиальных слоев GaAs и AlGaAs на микрорельефную поверхност' арсенида галлия

Publishing Information

Publisher
Fiziko-tekhnicheskij institut, NPO 'Fizika-Solntse'
Imprint Place
Tashkent (Uzbekistan)
Imprint Title
Proceedings of the conference 'Fundamental and applied problems of physics'
Imprint Pagination
494 p.
Journal Page Range
p. 333-334
Report number
INIS-UZ--133

Conference

Title
Conference on Fundamental and applied problems of physics consecrated to 60th anniversary of the Academy of Sciences of Uzbekistan and Physical-Technical Institute
Original Conference Title
Konferentsiya 'Fundamental'nye i prikladnye voprosy fiziki' posvyashchennaya 60--letiyu Akademii Nauk Respubliki Uzbekistan i Fiziko-Tekhnicheskogo Instituta
Dates
27-28 Nov 2003
Place
Tashkent (Uzbekistan)

Optional Information

Notes
1 ref. Imprint:Trudy konferentsii 'Fundamental'nye i prikladnye voprosy fiziki'