Published January 16, 1986
| Version v1
Journal article
Isothermal annealing of space charge in MNOS structures
Description
The influence of X-ray irradiation on the stationary conductivity and isothermal depolarization of MNOS structures is studied. It is shown that low-temperature annealing of radiated MNOS structures without bias voltage increases activation energy under isothermal depolarization from E/sub A/ = 0.8 eV up to E/sub A/ = 1.4 eV. The stationary conductivity activation energy is not changed and is equal to E/sub A/ = 1.4 eV. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 93
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 347-351
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17037675
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; DEPOLARIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; HOLES; LAYERS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDES; SILICON OXIDES; SPACE CHARGE; TIME DEPENDENCE; X RADIATION
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY; HEAT TREATMENTS; IONIZING RADIATIONS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS