Published November 7, 2003 | Version v1
Journal article

Investigations on the variable large bandgap semiconductor compound HgBrI

  • 1. Center for Microscopy - Microanalysis and Information Processing, University 'Politehnica' of Bucharest, 060032 Bucharest (Romania)
  • 2. Solid State Physics Section, Physics Department, Aristotle University of Thessaloniki, GR 54124 Thessaloniki (Greece)

Description

A new ternary compound, HgBrI, having a variable, large bandgap was investigated using different nondestructive methods. The homogeneity of the crystal composition along the growth axis was given from absorption edge measurements performed on different parts of the crystals using classical optical measurements. The atomic composition was determined by x-ray energy dispersive spectroscopy. Based on photoluminescence and reflection measurements using Confocal Scanning Laser Microscopy, the exact position and dimensions of the inhomogeneity regions were established

Availability note (English)

Available online at http://stacks.iop.org/0022-3727/36/2714/d3_21_019.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
36
Journal Issue
21
Journal Page Range
p. 2714-2718
ISSN
0022-3727
CODEN
JPAPBE