Published June 14, 2013
| Version v1
Journal article
Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals
- 1. Frankfurt Institute for Advanced Studies, Ruth-Moufang-Str. 1, 60438 Frankfurt am Main (Germany)
- 2. St. Petersburg State Maritime University, Leninsky ave. 101, 198262 St. Petersburg (Russian Federation)
Description
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer package [2,3]. The electron and positron channeling along Si(110) and Si(111) crystallographic planes are studied for the projectile energies 195-855 MeV.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/438/1/012018Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 438
- Journal Issue
- 1
- Journal Page Range
- [11 p.]
- ISSN
- 1742-6596
Conference
- Title
- International Conference on Dynamics of Systems on the Nanoscale
- Acronym
- DySoN 2012
- Dates
- 30 Sep - 4 Oct 2012
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44120108
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; CRYSTALLOGRAPHY; CRYSTALS; ELECTRON CHANNELING; EMISSION SPECTRA; MEV RANGE 100-1000; NANOSTRUCTURES; PERIODICITY; POSITRON CHANNELING; PROJECTILES; SILICON; TRAJECTORIES
- Descriptors DEC
- CHANNELING; ELEMENTS; ENERGY RANGE; MEV RANGE; SEMIMETALS; SIMULATION; SPECTRA; VARIATIONS