Published July 2010
| Version v1
Journal article
Variations in the electric characteristics of an organic Schottky diode with the P3HT thickness
- 1. Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)
- 2. Hanbat National University, Daejeon (Korea, Republic of)
Description
In this study, organic Schottky diodes were fabricated via a printing process. P3HT was used as an organic semiconductor material, and the variations in the electric characteristics of the diodes with the thickness of the thin film were analyzed. The on/off current ratio was 3.93 x 102 at ±5 V, and the off current at -5 V was 1.15 x 10-6 A. The on current decreased as the thickness was increased. With an input AC voltage of 20 Vp-p, the output characteristic showed DC 5.3 V and DC 3.2 V at frequencies of 100 Hz and 1 MHz, respectively. As the input frequency was increased, the output DC voltage was decreased more drastically in thicker diodes than in thin diodes.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 57
- Journal Issue
- 1
- Series
- 14 refs, 5 figs, 1 tab
- Journal Page Range
- p. 124-127
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 44076895
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ELECTRICAL PROPERTIES; ELECTRODES; FABRICATION; GOLD; ORGANIC MATTER; RECTIFIERS; SCHOTTKY BARRIER DIODES; THIN FILMS
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; MATTER; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENTS