Published May 28, 2012 | Version v1
Miscellaneous Open

Effect of annealing on properties of gallium-nitrogen Co-doped zinc oxide thin films prepared by sputtering and ion implantation

Creators

  • 1. Institute of Electronics and Photonics, Slovak University of Technology, 81219 Bratislava (Slovakia)
  • 2. Institute of Electronics and Photonics, Slovak University of Technology, 81219 Bratislava and Department of Electronics, University of Rousse, 7017 Rousse (Bulgaria)
  • 3. West Bohemia University, New technologies - Research Center, 30614 Plzen (Czech Republic)
  • 4. International Laser Centre, Bratislava, 81219 Bratislava (Slovakia)
  • 5. VINCA Institute of Nuclear Sciences, Laboratory for Atomic Physics, P.O.B. 522, 11001 Belgrade (Serbia)
  • 6. University of Surrey, Ion Beam Centre, Guildford GU2 7XH (United Kingdom)

Description

In this paper we report an influence of post-implantation annealing (in O2 and N2 up to 600 grad C) on electrical and structural properties of RF sputtered ZnO:Ga thin films implanted by double energy (40 keV and 80 keV) N+ ions. (authors)

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Part of:
Proceedings of the 18th International Conference on Applied Physics of Condensed Matter

Additional details

Identifiers

URL
http://kf.elf.stuba.sk/~apcom/apcom12/proceedings/;

Publishing Information

Publisher
Slovak University of Technology
Imprint Place
Bratislava (Slovakia)
ISBN
978-80-227-3720-3
Imprint Title
Proceedings of the 18th International Conference on Applied Physics of Condensed Matter
Imprint Pagination
369 p.
Journal Page Range
p. 207-210
Report number
INIS-SK--2017-027

Conference

Title
18. International Conference on Applied Physics of Condensed Matter
Acronym
APCOM 2012
Dates
20-22 Jun 2012
Place
Strbske Pleso (Slovakia)

INIS

Country of Publication
Slovakia
Country of Input or Organization
Slovakia
INIS RN
48042884
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ANNEALING; EXPERIMENTAL DATA; GALLIUM; ION BEAMS; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MATERIALS HANDLING; NITROGEN IONS; SEMICONDUCTOR MATERIALS; SOLID STATE PHYSICS; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES
Descriptors DEC
BEAMS; CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL ANALYSIS; COHERENT SCATTERING; DATA; DIFFRACTION; ELEMENTS; FILMS; HEAT TREATMENTS; INFORMATION; IONS; MATERIALS; METALS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHYSICS; SCATTERING; SPECTROSCOPY; ZINC COMPOUNDS

Optional Information

Contract/Grant/Project number
Programme ERDF ITMS 26240220072; projects APVV-LPP-0094-09; SK-SRB-0012-0; VEGA-1/0459/12; VEGA-1/0787/09; CENTEM CZ.1.05/2.1.00/03.0088; contract EC-227012
Notes
12, figs., 8 refs. Imprint:Published also on CDROM 32 MBytes in PDF format