Published November 26, 2014 | Version v1
Journal article

Numerical Simulation of Bosch Processing for Deep Silicon Plasma Etching

  • 1. Technology Development Center, Tokyo Electron U.S. Holdings Inc, Billerica, MA 01821 (United States)
  • 2. Department of Computer Science, University of Pennsylvania, Philadelphia, PA 19104 (United States)

Description

We present a simulation of the Bosch process using the feature-scale modeling software FPS3D. FPS3D is a generic simulator that can be applied to any set of materials, plasmas, reactive gases, and reactions for both 2D and 3D simulations of etching and deposition. FPS3D can simulate multi-time-step processes for which the fluxes, species, reactions, ion energies, angular distributions, and other parameters can change with each time-step; it is thus well-suited for Bosch process simulations. The polymer deposition and etching time-steps of the Bosch process are modeled and discussed in more detail than was previously attainable

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/550/1/012030

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
550
Journal Issue
1
Journal Page Range
[10 p.]
ISSN
1742-6596

Conference

Title
13. High-Tech Plasma Processes Conference
Acronym
HTPP-2014
Dates
22-27 Jun 2014
Place
Toulouse (France)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47010375
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANGULAR DISTRIBUTION; BOSCH PROCESS; COMPUTER CODES; COMPUTERIZED SIMULATION; DEPOSITION; ETCHING; PLASMA; POLYMERS; SILICON
Descriptors DEC
CHEMICAL REACTIONS; DISTRIBUTION; ELEMENTS; SEMIMETALS; SIMULATION; SURFACE FINISHING