Published November 26, 2014
| Version v1
Journal article
Numerical Simulation of Bosch Processing for Deep Silicon Plasma Etching
Creators
- 1. Technology Development Center, Tokyo Electron U.S. Holdings Inc, Billerica, MA 01821 (United States)
- 2. Department of Computer Science, University of Pennsylvania, Philadelphia, PA 19104 (United States)
Description
We present a simulation of the Bosch process using the feature-scale modeling software FPS3D. FPS3D is a generic simulator that can be applied to any set of materials, plasmas, reactive gases, and reactions for both 2D and 3D simulations of etching and deposition. FPS3D can simulate multi-time-step processes for which the fluxes, species, reactions, ion energies, angular distributions, and other parameters can change with each time-step; it is thus well-suited for Bosch process simulations. The polymer deposition and etching time-steps of the Bosch process are modeled and discussed in more detail than was previously attainable
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/550/1/012030Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 550
- Journal Issue
- 1
- Journal Page Range
- [10 p.]
- ISSN
- 1742-6596
Conference
- Title
- 13. High-Tech Plasma Processes Conference
- Acronym
- HTPP-2014
- Dates
- 22-27 Jun 2014
- Place
- Toulouse (France)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47010375
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANGULAR DISTRIBUTION; BOSCH PROCESS; COMPUTER CODES; COMPUTERIZED SIMULATION; DEPOSITION; ETCHING; PLASMA; POLYMERS; SILICON
- Descriptors DEC
- CHEMICAL REACTIONS; DISTRIBUTION; ELEMENTS; SEMIMETALS; SIMULATION; SURFACE FINISHING