Implantation profiles and sputtering studied by detecting the optical radiation from sputtered particles during ion bombardment

A method of sputter-etching and simultaneous registration of the emitted light is used to obtain depth profiles of implanted Li atoms. Measured mean penetration depths (Rsub(p)) and straggling values (ΔRsub(p)) for implanted Li into Ag, V, Si and Al are reported. It is found e.g. for 10 keV Li+ into V: Rsub(p)=400+-30 A and ΔRsub(p)=250+-30 A. Known implanted profiles are used as a scale of depth to determine sputtering yields of keV He+ ions. With this new method the sputtering yield of 40 keV He+ ions bombarding Ag was found to be 0.095+-0.020. Sputtering through a thin film is also used to determine sputtering yields. A remarkable increase in the light intensity from excited Ag I atoms is observed during sputtering through the interface between an Ag film and the underlying Al substrate. This is found to be due to a change in the excitation mechanism. Continuous features in the observed emission spectrum have in a few cases been identified as originating from deexcitation radiation of molecules formed in the sputtering process. (Auth.)