Published January 13, 1986 | Version v1
Journal article

Simulations of fine structures on the zero field steps of Josephson tunnel junctions

  • 1. IBM Thomas J. Watson Research Center, P.O. Box 281, Yorktown Heights, New York 10598

Description

Fine structures on the zero field steps of long Josephson tunnel junctions are simulated for junctions with the bias current injected into the junction at the edges. These structures are due to the coupling between self-generated plasma oscillations and the traveling fluxon. The plasma oscillations are generated by the interaction of the bias current with the fluxon at the junction edges. On the first zero field step, the voltages of successive fine structures are given by V/sub n/ = h/2e(2ω/sub p//n), where n is an even integer

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
48
Journal Issue
2
Series
Appl. Phys. Lett.
Journal Page Range
189-191
ISSN
0003-6951
CODEN
APPLA

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
17038112
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRIC POTENTIAL; JOSEPHSON JUNCTIONS; MAGNETIC FLUX; PLASMA WAVES; SIMULATION; TUNNEL EFFECT
Descriptors DEC
SEMICONDUCTOR JUNCTIONS