Published January 13, 1986
| Version v1
Journal article
Simulations of fine structures on the zero field steps of Josephson tunnel junctions
- 1. IBM Thomas J. Watson Research Center, P.O. Box 281, Yorktown Heights, New York 10598
Description
Fine structures on the zero field steps of long Josephson tunnel junctions are simulated for junctions with the bias current injected into the junction at the edges. These structures are due to the coupling between self-generated plasma oscillations and the traveling fluxon. The plasma oscillations are generated by the interaction of the bias current with the fluxon at the junction edges. On the first zero field step, the voltages of successive fine structures are given by V/sub n/ = h/2e(2ω/sub p//n), where n is an even integer
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 48
- Journal Issue
- 2
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 189-191
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17038112
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRIC POTENTIAL; JOSEPHSON JUNCTIONS; MAGNETIC FLUX; PLASMA WAVES; SIMULATION; TUNNEL EFFECT
- Descriptors DEC
- SEMICONDUCTOR JUNCTIONS