Structure of quasi-2 D subbands in Kane semiconductors (Hg1-xCdxTe of different composition and doping)

Experimental (analysis of capacity magnetoscintillations) and theoretical (in quasiclassical approximation) study was made on occupation parameters and cyclotronic masses in sublands of dimensional quantization of near-the-surface layers Hg1-xCdXTe depending on composition (x=0.09-0.3), surface density of carriers, the type and the level of doping. Adequacy of quasiclassical description of sublands in Kane semiconductors is explained by multiland character of the spectrum and by the closeness of near-the-surface potential to Coulomb one. Analogy between the gas of near-the-surface electrons of considered system and ultrarelativistic gas of the vacuum condensate of electrons near supercharged nuclei is drawn. The independence of subland parameters of the value of εg gap and mixing of states of two-dimensional layer and volume was explained in the framework of ultrarelativistic approach. The number of sublands of dimensional quantization is dictated mainly by the level of material doping both in inversion and enriched layers