Published January 1976
| Version v1
Journal article
Distribution of an impurity implanted into silicon after laser annealing
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Распределение внедренной в кремний примеси после лазерного отжига
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 10
- Journal Issue
- 1
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 139-140
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 8282195
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CRYSTAL DOPING; ELECTRON DENSITY; ELECTRON SPIN RESONANCE; INTERSTITIALS; ION IMPLANTATION; KEV RANGE 10-100; LASER RADIATION; P-TYPE CONDUCTORS; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION; V CENTERS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; MAGNETIC RESONANCE; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; RESONANCE; SEMICONDUCTOR MATERIALS; SEMIMETALS; VACANCIES
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.