Published September 16, 1978
| Version v1
Journal article
Defect annealing and transport properties in high-purity InSb irradiated at 80 K
Description
Galvanomagnetic and thermoelectric effects are measured at 80 K as functions of annealing temperature for 'pure' n-type InSb irradiated with 1-MeV electrons. The effects of defects on both carrier concentrations and carrier scattering are discussed. It is found that ionized impurity scattering and a high degree of compensation play dominant roles. Hence donor and acceptor defects are injected and removed in a pair-wise fashion. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 49
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 285-292
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 10438989
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANTIMONIDES; CARRIER DENSITY; ELECTRON BEAMS; GALVANOMAGNETIC EFFECT; HALL EFFECT; INDIUM COMPOUNDS; LOW TEMPERATURE; MAGNETORESISTANCE; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; THERMOELECTRIC PROPERTIES
- Descriptors DEC
- ANTIMONY COMPOUNDS; BEAMS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY RANGE; HEAT TREATMENTS; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS