Published September 2013 | Version v1
Journal article

Effects of Nd-doping on optical and photovoltaic properties of barium titanate thin films prepared by sol–gel method

  • 1. School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China)
  • 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Description

Graphical abstract: - Highlights: • We prepared Nd-doped BTO thin films by sol–gel method. • Addition of Nd to some extent can inhibit the grain growth. • Addition of Nd3+ ions can decrease band gap. • The remnant polarization of Nd-doped BTO thin films begins to increase and then decreases. • Photovoltaic properties of Nd-doped BTO thin films begin to increase then decrease. - Abstract: Nd-doped barium titanate thin films were prepared via sol–gel spin-coating method and effects of Nd content on microstructure, optical and photovoltaic properties have been investigated. The results show that Nd-doped barium titanate thin films are single tetragonal perovskite phase. Addition of neodymium to some extent can inhibit the grain growth. Substitution of Nd3+ ions for Ba2+ on A sites leads to the decrease of band gap. The remnant polarization begins to increase and reach the maximum and then decreases as Nd content increases. The short circuit photocurrent density, open circuit photovoltage and power conversion efficiency of Nd-doped barium titanate thin films begin to increase and reach the maximum and then decrease as Nd content increases

Availability note (English)

Available from http://dx.doi.org/10.1016/j.materresbull.2013.04.048

Additional details

Identifiers

DOI
10.1016/j.materresbull.2013.04.048;
PII
S0025-5408(13)00318-8;

Publishing Information

Journal Title
Materials Research Bulletin
Journal Volume
48
Journal Issue
9
Journal Page Range
p. 3092-3097
ISSN
0025-5408
CODEN
MRBUAC

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.