Physicochemical state and charge transfer ion inorganic dielectric materials after ion and thermal modification

The influence of ion and heat induced modification on structural and phase variations of heat resistant inorganic dielectrics has been studied. Pronounced phase transformations have been shown to occur under postimplantation annealing in the irradiated surface layer. Their evolution has been investigated. For the oxide and nitride compounds the modification optimum conditions causing the transition from dielectric to semiconductive state have been determined. The electrophysical properties of the modified surface of dielectric materials have been studied. 34 refs., 8 figs., 1 tab