Deviation from stoichiometry in the series of semiconducting compounds InP, InAs, InSb

Defect formation in InP, InAs, InSb compounds is studied in terms of the field thermodynamic model. Concentration of eigen point defects is calculated and ranges of homogeneity of the mentioned compounds are determined using quasichemical reaction technique. Deviation from stoichiometry is minimal in indium antimonide and maximal one - in indium arsenide. Dependence of variation of homogeneity range width for InP, InAs, InSb is explained from the point of view of the nature of chemical bond in them. 16 refs.; 2 figs.; 2 tabs