Development of an alkali-metal-free bath for electroless deposition of Co-W-P capping layers for copper interconnections
- 1. Department of Materials Science and Technology, University of Rajshahi, Rajshahi 6205 (Bangladesh)
- 2. Department of Chemical Engineering and Division of Energy Systems Research, Ajou University, Suwon 443-749 (Korea, Republic of)
- 3. Center for Clean Technology, Yonsei University, Seoul 120-749 (Korea, Republic of)
Description
A bath containing alkali-metal-free chemicals was developed for electroless deposition of Co-W-P thin films on a copper substrate and an optimisation of bath compositions was made. Ammonium cobalt sulphate, ammonium tungstate and ammonium hypophosphite were used as the precursors of cobalt, tungsten and phosphorus, respectively. Dimethylamine borane and ammonium citrate were used as reducing and complexing agents, respectively. It was found that the cobalt content, film thickness and grain size increased with increase in cobalt ion concentration in the bath. Tungsten in the films increased from 1 to 6 at.% when its concentration in the bath was increased from 0.001 to 0.009 M. A variation of phosphorus content from 2 to 12 at.% was made by increasing its concentration from 0.01 to 0.05 M. It was found that the deposition rate decreased with increasing citrate ion concentration. Amorphous films were obtained when the combined amount of phosphorus and tungsten exceeded 12 at.% in the films. The crystalline film had small spherical crystallites with diameter less than 40 nm
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2007.12.003Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2007.12.003;
- PII
- S0925-8388(07)02271-2;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 467
- Journal Issue
- 1-2
- Journal Page Range
- p. 370-375
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40050083
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMMONIUM TUNGSTATES; CHELATING AGENTS; COBALT ALLOYS; COBALT IONS; COPPER; DEPOSITION; GRAIN SIZE; LAYERS; OPTIMIZATION; PHOSPHORUS ADDITIONS; SPHERICAL CONFIGURATION; THIN FILMS; TUNGSTEN ALLOYS
- Descriptors DEC
- ALLOYS; AMMONIUM COMPOUNDS; CHARGED PARTICLES; CONFIGURATION; ELEMENTS; FILMS; IONS; METALS; MICROSTRUCTURE; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SIZE; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTATES; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.