Published July 2019
| Version v1
Journal article
Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films
Creators
- 1. Institute of Spectroscopy, Russian Academy of Sciences (Russian Federation)
- 2. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences (Russian Federation)
Description
The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Optics and Spectroscopy
- Journal Volume
- 127
- Journal Issue
- 1
- Journal Page Range
- p. 36-39
- ISSN
- 0030-400X
- CODEN
- OPSUA3
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51117544
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ALUMINIUM NITRIDES; DOPED MATERIALS; FILMS; GALLIUM NITRIDES; LAYERS; PHONONS; PLASMONS; POLARONS; REFLECTION; SAPPHIRE; SILICON; SPECTRA; SPECTROSCOPY; SUBSTRATES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CORUNDUM; ELEMENTS; GALLIUM COMPOUNDS; MATERIALS; METALS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; PNICTIDES; QUASI PARTICLES; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2019 Pleiades Publishing, Ltd.