Published 2006 | Version v1
Journal article

Defects creation under UV irradiation of PbWO4 crystals

  • 1. Inst. of Physics AS CR, Cukrovarnicka 10, 162 53 Prague (Czech Republic)
  • 2. Inst. of Applied Physics, Via Panciatichi 64, 50127 Florence (Italy)
  • 3. Inst. of Physics, Univ. of Tartu, Riia 142, 51014 Tartu (Estonia)

Description

A systematic study of photo-thermally stimulated defects creation processes is carried out by the thermally stimulated luminescence (TSL) method for a large number of undoped and doped PbWO4 crystals under irradiation at 80-180 K in the 3.4-4.3 eV energy range. The activation energy Ea for the regular exciton state disintegration is found to be ∼0.1 eV. For defect-related states disintegration, Ea varies in the crystals studied from 0.03 to 0.36 eV. The origin of the defect-related states is discussed. The conclusion is made that not only a release of charge carriers but also charge transfer processes take place under UV irradiation of PbWO4 crystals. (authors)

Availability note (English)

Available from doi: http://dx.doi.org/10.1093/rpd/nci580

Additional details

Identifiers

Publishing Information

Journal Title
Radiation Protection Dosimetry
Journal Volume
119
Journal Issue
1-4
Journal Page Range
p. 164-167
ISSN
0144-8420

Conference

Title
14. International Conference on Solid State Dosimetry
Acronym
SSD14
Dates
27 Jun - 2 Jul 2004
Place
New Haven (United States)

Optional Information

Notes
6 refs