Structural design for enhanced light extraction in light emitting diodes with nano-patterned n-GaN

We analyzed the structure of light-emitting diode (LED) chips, where nano-sized cylindrical patterns are distributed inside the n-GaN region, by using a three-dimensional finite-difference time domain method. Using the simulated data, we optimized the design of the structure to enhance the light extraction efficiency. We varied the diameter, density, height, and refractive index of the nano-patterns embedded in the LEDs and found the optimized parameters. Our analyses and design results are applicable to the fabrication of LEDs for enhanced light extraction.