Published August 28, 2016 | Version v1
Journal article

Epitaxial growth and electronic structure of oxyhydride SrVO2H thin films

  • 1. Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan)
  • 2. Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan)
  • 3. Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan)
  • 4. Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Mikazuki-cho, Hyogo 679-5198 (Japan)

Description

Oxyhydride SrVO2H epitaxial thin films were fabricated on SrTiO3 substrates via topotactic hydridation of oxide SrVO3 films using CaH2. Structural and composition analyses suggested that the SrVO2H film possessed one-dimensionally ordered V-H-V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO2H film was reversible to SrVO3 by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V3+ valence state in the SrVO2H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
120
Journal Issue
8
Journal Page Range
vp.
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2016 Author(s)