Periodic lattice distortion accompanying the (3x3) charge-density-wave phase of Sn/Ge(111)
- 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831-6030 (United States)
- 2. Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee37996-1200 (United States)
Description
Surface x-ray diffraction has been used to determine the periodic lattice distortion (PLD) accompanying the charge-density-wave (CDW) formation in the α phase of Sn on Ge(111). Scanning tunneling microscopy observations of the CDW show a ∼0.5-Angstrom vertical charge corrugation in the image of the Sn atoms, but the measured vertical ripple in the PLD is almost zero, ∼0.04±0.04 Angstrom. The PLD occurs almost exclusively in the outermost Ge layer, where a 0.22-Angstrom lateral motion of the three Ge atoms is associated with the Sn atom with largest amplitude in the CDW. Surprisingly, Sn ion cores move in the opposite direction from valence electrons. These results will be discussed in light of the recent models put forward to explain the CDW formation. copyright 1998 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 57
- Journal Issue
- 8
- Journal Page Range
- p. 4579-4583
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 29041140
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE DENSITY; CRYSTAL STRUCTURE; GERMANIUM; LAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES; TIN; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; MATERIALS; METALS; MICROSCOPY; SCATTERING