Analysis and correction of carrier spilling effect for different Si structures

In this article we present a method for basic correction of carrier concentration profiles measured by the spreading resistance technique for the carrier spilling effect. It is shown how to calculate carrier distribution on the bevelled surface and what is the effect of the bevel on the distribution of free charge carriers. We also present how carrier spilling affects different silicon structures and whether the so-called zero field correction is sufficient. This is done on several typical silicon structures used in semiconductor technology. For comparison we used SIMS ND(x) profiles and theoretical Nt(x) profiles simulated by DIOS. (authors)