Published November 1, 2017 | Version v1
Journal article

Fabrication and modeling of multi-layer metal–insulator-metal capacitors

  • 1. MLR Institute of Technology, Dundigal, Hyderabad 500043 (India)

Description

This paper presents the fabrication and modeling for capacitance–voltage characteristics of multi-layer metal–insulator–metal capacitors. It is observed that, due the applied electric field, the effective dielectric constant of the stack was increased due to the accumulation of charges at the interface of high-to-low conductance materials. It is observed that the Maxwell–Wagner polarization is dominant at low frequencies (<10 kHz). By introducing carrier tunneling probability of the dielectric stack, the model presented in this paper shows a good agreement with experimental results. The presented model indicates that the nonlinearity can be suppressed by choosing the similar permittivity dielectric materials for fabrication of multilayer metal insulator metal capacitors. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/38/12/123002

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
38
Journal Issue
12
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51064543
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FABRICATION; KHZ RANGE; LAYERS; METALS; NONLINEAR PROBLEMS; PERMITTIVITY; SIMULATION
Descriptors DEC
DIELECTRIC PROPERTIES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; FREQUENCY RANGE; MATERIALS; PHYSICAL PROPERTIES