Fabrication and modeling of multi-layer metal–insulator-metal capacitors
Creators
- 1. MLR Institute of Technology, Dundigal, Hyderabad 500043 (India)
Description
This paper presents the fabrication and modeling for capacitance–voltage characteristics of multi-layer metal–insulator–metal capacitors. It is observed that, due the applied electric field, the effective dielectric constant of the stack was increased due to the accumulation of charges at the interface of high-to-low conductance materials. It is observed that the Maxwell–Wagner polarization is dominant at low frequencies (<10 kHz). By introducing carrier tunneling probability of the dielectric stack, the model presented in this paper shows a good agreement with experimental results. The presented model indicates that the nonlinearity can be suppressed by choosing the similar permittivity dielectric materials for fabrication of multilayer metal insulator metal capacitors. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/38/12/123002Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 38
- Journal Issue
- 12
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51064543
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FABRICATION; KHZ RANGE; LAYERS; METALS; NONLINEAR PROBLEMS; PERMITTIVITY; SIMULATION
- Descriptors DEC
- DIELECTRIC PROPERTIES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; FREQUENCY RANGE; MATERIALS; PHYSICAL PROPERTIES