Published March 1974 | Version v1
Journal article Metadata-only

Fine compensation of trapping centers in semiconductor films by metal islands

Creators

  • 1. AN SSSR, Moscow. Inst. Radiotekhniki i Ehlektroniki

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Тонкая компенсация центров захвата в полупроводниковых пленках металлическими островками

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
8
Journal Issue
3
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
622-623

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
5134564
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
BISMUTH; CADMIUM SULFIDES; COATINGS; CRYSTAL DOPING; ELECTRIC CONTACTS; ELECTRON MICROSCOPY; ELECTRON MOBILITY; FILMS; INDIUM; MONOCRYSTALS; SILVER; TRAPS; WORK FUNCTIONS
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL EQUIPMENT; ELEMENTS; INORGANIC PHOSPHORS; METALS; MICROSCOPY; MOBILITY; PARTICLE MOBILITY; PHOSPHORS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
Published in summary form only; for English translation see the journal Sov. Phys. -Semicond.