Tunnel barrier fabrication on Si and its impact on a spin transistor

The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel-injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteristics of this spin tunnel transistor will be presented, including its behavior and magnetic sensitivity