Transient behavior analysis of float-zone silicon phototransistors

In this paper, the transient behavior of new float-zone silicon phototransistors, especially the dependence of response-time on incident optical power and bias-voltage were measured and analyzed. According to the measurement results of the devices, the response-time depends more strongly on the incident optical power than bias-voltage; under the incident optical power of 416 nW and 1128 nW, the response-time of the larger scale device is about 170 μs and 10 μs respectively; under the incident optical power of 416 nW, the response-time of the smaller scale device is about 30 μs, which is in accordance with theoretical prediction. (authors)