Published March 2012 | Version v1
Journal article

Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows

  • 1. Henan University, Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Kaifeng (China)
  • 2. Chinese Academy of Sciences, Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Beijing (China)

Description

Wurtzite (w) and zincblende (zb) InN films have been grown on (011) SrTiO3 (STO) substrates by metal-organic chemical vapor deposition, the epitaxial relationships and optical properties are characterized by X-ray diffraction (XRD), absorption and photoluminescence (PL). Based on XRD θ-2θ and Φ scanning results, the epitaxial relationships between (w- and zb-) InN films and STO substrates are determined, that is, (0001)[1120]w-InN//(011)[100]STO and (100)[011]zb-InN//(011)[100]STO. Compared with the w-InN films, the zb-InN films exhibit a red shift in absorption edge and PL spectra, and a much narrower and stronger PL spectrum, implying a better optical quality of zb-InN films. The structure transition is supposed to be due to the difference in atom and bond areal density between the crystal plane of w-InN(0001) and zb-InN(100). (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-011-6644-1

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
106
Journal Issue
3
Journal Page Range
p. 655-659
ISSN
0947-8396
CODEN
APAMFC