Published 1988
| Version v1
Miscellaneous
Thin-layer photoemitters of polarized electrons
Description
Effect of GaAs(100) emitting layer thickness on the polarization degree and photoelectron quantum yield at 80 and 300 K emitter temperature is investigated. Conditions for creating effective polarized electron sources (PES) are determined
Additional details
Additional titles
- Original title (Russian)
- Тонкослойные фотоэмиттеры поляризованных электронов
Publishing Information
- Imprint Title
- General and nuclear physics
- Imprint Pagination
- 118 p.
- Journal Issue
- no. 1(41
- Series
- Voprosy atomnoj nauki i tekhniki.
- Journal Page Range
- p. 93-94.
- Report number
- INIS-SU--172
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 21060341
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EPITAXY; GALLIUM ARSENIDES; LOW TEMPERATURE; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; PHOTOELECTRIC EMISSION; POLARIZATION; QUANTUM EFFICIENCY; THICKNESS; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; EFFICIENCY; ELECTRON EMISSION; EMISSION; FILMS; GALLIUM COMPOUNDS; MATERIALS; PHOTOELECTRIC EFFECT; PNICTIDES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Imprint:Obshchaya i yadernaya fizika.;Nauchno-tekhnicheskij sbornik.