Published November 2010
| Version v1
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Temperature Dependence Of Magnetoresistance In GaMnAs Epitaxial Layer
- 1. Uzbekistan National University, Tashkent(Uzbekistan)
- 2. Chungnam National University, Daejeon (Korea, Republic of)
Description
no abstract available
Files
41131577.pdf
Files
(17.8 kB)
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Additional details
Publishing Information
- Publisher
- Heat Physics Department of Uzbekistan Academy of Sciences
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Program and Abstracts of the ninth Joint Uzbek-Korea Symposium Nanoscience: Problems and Prospects on Quantum Functional Materials and Devices
- Imprint Pagination
- 48 p.
- Journal Page Range
- p. 32
- Report number
- INIS-UZ--171
Conference
- Title
- Problems and Prospects on Quantum Functional Materials and Devices
- Acronym
- 9. Joint Uzbek-Korea Symposium Nanoscience
- Dates
- 2-5 Nov 2010
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 41131577
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANISOTROPY; CURIE POINT; GALLIUM COMPOUNDS; HALL EFFECT; MAGNETIC FIELDS; MAGNETORESISTANCE; MANGANESE ARSENIDES; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EPITAXY; FILMS; MANGANESE COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION TEMPERATURE
Optional Information
- Notes
- 1 fig.