Published November 1996 | Version v1
Journal article Metadata-only

Structure of yttrium oxide thin films prepared by reactive RF diode sputtering

Creators

  • 1. L'vovskij Gosudarstvennyj Univ., Lvov (Ukraine)

Description

A study was made on the effect of sputtering medium composition on formation of structure of Y2O3 thin films during preparation by reactive high-frequency diode sputtering. It was established that crystallization of thin film yttrium oxide either in B- or C-form was dictated by the near order in amorphous phase of Y2O3 film and depended on composition of sputtering atmosphere. Formation of monoclinic modification of yttrium oxide takes place along with cubic one at low temperature synthesis during diode sputtering. 9 refs.; 3 figs

Additional details

Additional titles

Original title (Russian)
Структура тонких пленок оксида иттрия, полученных реактивным высокочастотным ионно-плазменным распылением

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
32
Journal Issue
11
Journal Page Range
p. 1372-1374.
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
28058545
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CRYSTALLIZATION; CUBIC LATTICES; MONOCLINIC LATTICES; PARTIAL PRESSURE; SPUTTERING; THIN FILMS; YTTRIUM OXIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; FILMS; HEAT TREATMENTS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS