Construction of an ion implantation device and studies of the influence of implantation parameters on the recovery of boron and phosphorus implanted silicon

The device described was used for the implantation of boron ions and phosphorus ions into silicon. The energy of ion beams was varied in the range of 25 to 100 KeV and the temperature from 20 to 450 deg C. The doses applied were 1x1013 to 4x1015 ions/cm2 and the angle between beam and the crystal axis was 8 deg. In each case the samples were annealed in steps of 50 deg over the range of 400 to 1000 deg C. The thermal recovery was studied by Hall and resistance measurements of the implanted layers. The results obtained were interpreted on the basis of literature data on the kinetics of recovery. Implantations at room temperature resulted in differences of the recovery of B and P samples, whereas at higher temperatures similar characteristics could be observed. (author)