Published December 2009
| Version v1
Journal article
The development and application of silicon neutron transmutation doping (NTD) technology in china
- 1. China Institute of Atomic Energy, Beijing (China)
Description
The research and development history of silicon Neutron Transmutation Doping (NTD) technology and its applications at home and abroad are introduced in this paper. The advantages of NTD, compared with conventional technology of doping, are narrated. The principle of NTD as well as the implementation of the main procedures related to Si NTD is explained. The market demand tendency is prospected, and the advanced measures on NTD quality control are described. (authors)
Additional details
Publishing Information
- Journal Title
- Engineering Sciences
- Journal Volume
- 7
- Journal Issue
- 4
- Journal Page Range
- p. 95-100
- ISSN
- 1672-4178
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 42061380
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHINA; CRYSTAL DOPING; DEMAND; IMPLEMENTATION; MARKET; NEUTRONS; QUALITY CONTROL; SILICON; TRANSMUTATION
- Descriptors DEC
- ASIA; BARYONS; CONTROL; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; NUCLEONS; SEMIMETALS
Optional Information
- Notes
- 8 figs., 2 tabs.