Published January 2010 | Version v1
Journal article

Influence of gold particle size on melting temperature of VLS grown silicon nanowire

  • 1. Microelectronic Center, College of Information Engineering, North China University of Technology, Beijing 100144 (China)

Description

Based on the Lindemann melting model, a model related to gold nanoparticle size and melting temperature for VLS grown silicon nanowire is proposed. Eutectic temperatures of Au-Si with different gold sizes have been calculated using the model and are in agreement with the experimental results. This model has been demonstrated to be reasonable, and it can be used to determine the growth temperature of silicon nanowire. (semiconductor physics)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/31/1/012002

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
31
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42068347
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
GOLD; MELTING POINTS; PARTICLE SIZE; QUANTUM WIRES; SILICON
Descriptors DEC
ELEMENTS; METALS; NANOSTRUCTURES; PHYSICAL PROPERTIES; SEMIMETALS; SIZE; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS; TRANSITION TEMPERATURE