Mechanisms of charge transport in anisotype n-TiO2/p-CdTe heterojunctions

Surface-barrier anisotype n-TiO2/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.