Published October 2013 | Version v1
Journal article

Photophysical properties and energy transfer mechanism of PFO/Fluorol 7GA hybrid thin films

  • 1. Department of Physics, Faculty of Science, Sana'a University (Yemen)
  • 2. School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia (UKM), 43600 Bangi, Selangor (Malaysia)
  • 3. Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 Bangi, Selangor (Malaysia)

Description

Photophysical properties of poly (9,9′-di-n-octylfluorenyl-2.7-diyl) (PFO)/2-butyl-6- (butylamino)benzo [de] isoquinoline-1,3-dione (Fluorol 7GA) and energy transfer between them have been investigated. In this work, both PFO and Fluorol 7GA act as donor and acceptor, respectively. Based on the absorption and luminescence measurements, the photophysical and energy transfer properties such as fluorescence quantum yield (Φf), fluorescence lifetime (τ), radiative rate constant (kr), non-radiative rate constant (knr), quenching rate constant (kSV), energy transfer rate constant (kET), energy transfer probability (PDA), energy transfer efficiency (η), critical concentration of acceptor (Co), energy transfer time (τET) and critical distance of energy transfer (Ro) were calculated. Large values of kSV, kET and Ro suggested that Förster-type energy transfer was the dominant mechanism for the energy transfer between the excited donor and ground state acceptor molecules. It was observed that the Förster energy transfer together with the trapping process are crucial for performance improvement in ITO/(PFO/Fluorol7GA)/Al device. -- Highlights: • The efficient of energy transfer from PFO to Fluorol 7GA was evidenced. • The resonance energy transfer (Förster type) is the dominant mechanism. • Hsu et al. model was used to calculate Φf, τ, kr and knr of PFO thin film. • Several of the photophysical and energy transfer properties were calculated. • Trapping process and Förster energy transfer led to improve the device performance

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2013.03.031

Additional details

Identifiers

DOI
10.1016/j.jlumin.2013.03.031;
PII
S0022-2313(13)00171-3;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
142
Journal Page Range
p. 57-65
ISSN
0022-2313
CODEN
JLUMA8

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45062080
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ABSORPTION; EFFICIENCY; ENERGY TRANSFER; FLUORESCENCE; GROUND STATES; HYBRIDIZATION; LIGHT EMITTING DIODES; REACTION KINETICS; THIN FILMS
Descriptors DEC
EMISSION; ENERGY LEVELS; FILMS; KINETICS; LUMINESCENCE; PHOTON EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SORPTION

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.