Photophysical properties and energy transfer mechanism of PFO/Fluorol 7GA hybrid thin films
Creators
- 1. Department of Physics, Faculty of Science, Sana'a University (Yemen)
- 2. School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia (UKM), 43600 Bangi, Selangor (Malaysia)
- 3. Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 Bangi, Selangor (Malaysia)
Description
Photophysical properties of poly (9,9′-di-n-octylfluorenyl-2.7-diyl) (PFO)/2-butyl-6- (butylamino)benzo [de] isoquinoline-1,3-dione (Fluorol 7GA) and energy transfer between them have been investigated. In this work, both PFO and Fluorol 7GA act as donor and acceptor, respectively. Based on the absorption and luminescence measurements, the photophysical and energy transfer properties such as fluorescence quantum yield (Φf), fluorescence lifetime (τ), radiative rate constant (kr), non-radiative rate constant (knr), quenching rate constant (kSV), energy transfer rate constant (kET), energy transfer probability (PDA), energy transfer efficiency (η), critical concentration of acceptor (Co), energy transfer time (τET) and critical distance of energy transfer (Ro) were calculated. Large values of kSV, kET and Ro suggested that Förster-type energy transfer was the dominant mechanism for the energy transfer between the excited donor and ground state acceptor molecules. It was observed that the Förster energy transfer together with the trapping process are crucial for performance improvement in ITO/(PFO/Fluorol7GA)/Al device. -- Highlights: • The efficient of energy transfer from PFO to Fluorol 7GA was evidenced. • The resonance energy transfer (Förster type) is the dominant mechanism. • Hsu et al. model was used to calculate Φf, τ, kr and knr of PFO thin film. • Several of the photophysical and energy transfer properties were calculated. • Trapping process and Förster energy transfer led to improve the device performance
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2013.03.031Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2013.03.031;
- PII
- S0022-2313(13)00171-3;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 142
- Journal Page Range
- p. 57-65
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45062080
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; EFFICIENCY; ENERGY TRANSFER; FLUORESCENCE; GROUND STATES; HYBRIDIZATION; LIGHT EMITTING DIODES; REACTION KINETICS; THIN FILMS
- Descriptors DEC
- EMISSION; ENERGY LEVELS; FILMS; KINETICS; LUMINESCENCE; PHOTON EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SORPTION
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.