Published September 25, 2004 | Version v1
Journal article

Transport via excitonic complexes in resonant tunneling structures

  • 1. Universidade de Sao Paulo, FZEA-ZAB (Brazil)
  • 2. Universidade Federal de Sao Carlos, CP 676, Sao Carlos, SP 13560-970 (Brazil)
  • 3. Universidade Federal de Sao Carlos, CP 676, Sao Carlos, SP 13560-970 (Brazil) and Departamento de Fisica, Universidade Federal de Santa Catarina (Brazil)
  • 4. Grupo de Propriedades Opticas, Instituto de Fisica Gleb Wataghin, Universidade de Campinas, Caixa Postal 6165, Campinas, SP 13083-970 (Brazil)

Description

In this work we study the formation of neutral and negatively charged excitons in double barrier diodes under bias, and how they contribute to transport. We observe a pre-resonance shoulder in the current-voltage curve, which is associated to trion-assisted tunneling of electrons. We analyze this phenomenon by measuring also the quantum-well photoluminescence emission. This trion-assisted mechanism is terminated when trion complexes are dissociated either by thermal excitation or by scattering with free carriers in the quantum well. A simple phenomenological rate equation model allows us confirming the hypothesis of charge transport via a trion state and the proposed methods of termination

Additional details

Identifiers

DOI
10.1016/j.mseb.2004.05.018;
PII
S0921-5107(04)00220-X;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
112
Journal Issue
2-3
Journal Page Range
p. 128-130
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.